dat a sheet product specification february 1999 discrete semiconductors byv29f, byv29x series rectifier diodes ultrafast
nxp semiconductors product specification rectifier diodes byv29f, byv29x series ultrafast features symbol quick reference data ? low forward volt drop v r = 300 v/ 400 v/ 500 v ? fast switching ? soft recovery characteristic v f 1.03 v ? high thermal cycling performance ? isolated mounting tab i f(av) = 9 a t rr 60 ns general description ultra-fast epitaxial rectifier diodes intended for use in switched mode power supply output rectification, electronic lighting ballasts and high frequency switching circuits in general. the byv29f series is supplied in the sod100 package. the byv29x series is supplied in the sod113 package. pinning sod100 sod113 pin description 1 cathode (k) 2 anode (a) tab isolated limiting values limiting values in accordance with the absolute maximum system (iec 134). symbol parameter conditions min. max. unit byv29f/byv29x -300 -400 -500 v rrm peak repetitive reverse voltage - 300 400 500 v v r continuous reverse voltage t hs 138?c 1 - 300 400 500 v i f(av) average forward current 2 square wave; = 0.5; - 9 a t hs 90 ?c i fsm non-repetitive peak forward t = 10 ms - 100 a current t = 8.3 ms - 110 a sinusoidal; with reapplied v rrm(max) t stg storage temperature -40 150 ?c t j operating junction temperature - 150 ?c k a 12 12 case 12 case 1 t hs de-rating for thermal stability. 2 neglecting switching and reverse current losses february 1999 1 rev 1.400
nxp semiconductors product specification rectifier diodes byv29f, byv29x series ultrafast isolation limiting value & characteristic t hs = 25 ?c unless otherwise specified symbol parameter conditions min. typ. max. unit v isol peak isolation voltage from sod100 package; r.h. 65%; clean and - - 1500 v all terminals to external dustfree heatsink v isol r.m.s. isolation voltage from sod113 package; f = 50-60 hz; - - 2500 v all terminals to external sinusoidal waveform; r.h. 65%; clean heatsink and dustfree c isol capacitance from pin 2 to f = 1 mhz - 10 - pf external heatsink thermal resistances symbol parameter conditions min. typ. max. unit r th j-hs thermal resistance junction to with heatsink compound - - 5.5 k/w heatsink without heatsink compound - - 7.2 k/w r th j-a thermal resistance junction to in free air. - 55 - k/w ambient electrical characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit v f forward voltage i f = 8 a; t j = 150?c - 0.90 1.03 v i f = 8 a - 1.05 1.25 v i f = 20 a - 1.20 1.40 v i r reverse current v r = v rrm - 2.0 50 a v r = v rrm ; t j = 100 ?c - 0.1 0.35 ma q s reverse recovery charge i f = 2 a to v r 30 v; - 40 60 nc di f /dt = 20 a/s t rr reverse recovery time i f = 1 a to v r 30 v; - 50 60 ns di f /dt = 100 a/s i rrm peak reverse recovery current i f = 10 a to v r 30 v; - 4.0 5.5 a di f /dt = 50 a/s; t j = 100?c v fr forward recovery voltage i f = 10 a; di f /dt = 10 a/s - 2.5 - v february 1999 2 rev 1.400
nxp semiconductors product specification rectifier diodes byv29f, byv29x series ultrafast fig.1. definition of t rr , q s and i rrm fig.2. definition of v fr fig.3. maximum forward dissipation p f = f(i f(av) ); square wave where i f(av) =i f(rms) x d. fig.4. maximum forward dissipation p f = f(i f(av) ); sinusoidal current waveform where a = form factor = i f(rms) / i f(av) . fig.5. maximum t rr at t j = 25?c and 100?c fig.6. maximum i rrm at t j = 25?c and 100?c. q s 100% 10% time di dt f i r i f i rrm t rr 0246810 0 2 4 6 8 10 12 a = 1.57 1.9 2.2 2.8 4 byv29 rs = 0.019 ohms vo = 0.89v if(av) / a pf / w ths(max) / c 150 139 128 117 106 95 84 time time v f v fr v f i f 1 10 trr / ns 11 0 100 1000 100 dif/dt (a/us) 1a if=10 a tj = 25 c tj = 100c 0 5 10 15 0 5 10 15 0.5 0.2 0.1 byv29 if(av) / a pf / w d = 1.0 rs = 0.0190 ohms vo = 0.8900 v d = t p t p t t t i ths(max) / c 150 122.5 95 67.5 10 1 0.1 0.01 irrm / a 1 10 100 -dif/dt (a/us) if=1a if=10a tj = 25 c tj = 100c february 1999 3 rev 1.400
nxp semiconductors product specification rectifier diodes byv29f, byv29x series ultrafast fig.7. typical and maximum forward characteristic i f = f(v f ); parameter t j fig.8. maximum q s at t j = 25?c fig.9. transient thermal impedance z th j-hs = f(t p ) 0 1 2 30 20 10 0 typ max if / a 0.5 1.5 vf / v tj=150 c tj=25 c byw29 1us 10us 100us 1ms 10ms 100ms 1s 10s 0.001 0.01 0.1 1 10 byv29f pulse width, tp (s) transient thermal impedance, zth j-hs (k/w) d = t p t p t t p t d 1 10 100 1000 qs / nc 1.0 10 100 -dif/dt (a/us) if = 10 a 2 a february 1999 4 rev 1.400
nxp semiconductors product specification rectifier diodes byv29f, byv29x series ultrafast mechanical data dimensions in mm net mass: 2 g fig.10. sod100; the seating plane is electrically isolated from all terminals. notes 1. refer to mounting instructions for f-pack envelopes. 2. epoxy meets ul94 v0 at 1/8". 10.2 max 5.7 max 3.2 3.0 0.9 0.5 4.4 max 2.9 max 4.4 4.0 seating plane 7.9 7.5 17 max 0.55 max 1.3 13.5 min 5.08 0.9 0.7 m0.4 top view 3.5 max not tinned 4.4 ka february 1999 5 rev 1.400
nxp semiconductors product specification rectifier diodes byv29f, byv29x series ultrafast mechanical data dimensions in mm net mass: 2 g fig.11. sod113; the seating plane is electrically isolated from all terminals. notes 1. refer to mounting instructions for f-pack envelopes. 2. epoxy meets ul94 v0 at 1/8". 10.3 max 3.2 3.0 4.6 max 2.9 max 2.8 seating plane 6.4 15.8 max 0.6 2.5 2.54 5.08 12 3 max. not tinned 3 0.5 2.5 0.9 0.7 m 0.4 15.8 max. 19 max. 13.5 min. recesses (2x) 2.5 0.8 max. depth 1.0 (2x) february 1999 6 rev 1.400
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